Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics

Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Brunell, IF, Sutcliffe, CJ and Potter, RJ ORCID: 0000-0003-0896-4536 (2015) Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5 (1). 017115-.

	Text 1.4905887.pdf - Author Accepted Manuscript Available under License Creative Commons Attribution. Download (8MB)
	Text 1.4905887 - Unspecified Access to this file is embargoed until Unspecified. Download (86kB)

Abstract

We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60 degrees C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al2O3 films exhibit dielectric constants of 8 - 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Item Type:	Article
Subjects:	?? Q1 ?? ?? QC ?? ?? QD ??
Depositing User:	Symplectic Admin
Date Deposited:	24 Feb 2015 11:15
Last Modified:	14 Mar 2024 21:25
DOI:	10.1063/1.4905887
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/2006599