Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures

Weerakkody, D, Sedghi, N, Mitrovic, I, Van Zalinge, H, Nemr Noureddine, I, Hall, S, Wrench, J, Phillips, L, Treharne, R and Durose, K (2015) Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. [UNSPECIFIED]

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Abstract

The electrical properties of bi-layer Ta2O5/Al2O3 and Nb2O5/Al2O3 metal–insulator–insulator–metal nanostructures as rectifiers have been investigated. The ultra-thin (1–6 nm) insulator layers were deposited by atomic-layer deposition or rf magnetron sputtering with Al as metal contacts. Variable angle spectroscopic ellipsometry was performed to extract the optical properties and band gap of narrow band gap insulator layers while the surface roughness of the metal contacts was measured by atomic force microscopy. Superior low voltage large signal and small signal nonlinearities such as asymmetry of 18 at 0.35 V, rate of change of non-linearity of 7.5 V�1, and responsivity of 9 A/W at 0.2 V were observed from the current–voltage characteristics. A sharp increase in current at �2 V on Ta2O5/Al2O3 device can be ascribed to resonant tunneling.

Item Type:	UNSPECIFIED
Depositing User:	Symplectic Admin
Date Deposited:	19 May 2015 09:04
Last Modified:	27 Jun 2016 15:48
DOI:	10.1016/j.mee.2015.04.110
URI:	http://livrepository.liverpool.ac.uk/id/eprint/2008800

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• Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. (deposited 19 May 2015 09:04) [Currently Displayed]
  • Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. (deposited 27 Jun 2016 15:48)

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