Roberts, Joseph, Chalker, Paul ORCID: 0000-0002-2295-6332, Lee, Kean Boon, Houston, Peter, Cho, S Jin, Thayne, Iain, Guiney, Iver, Wallis, David and Humphreys, Colin
(2016)
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics.
Applied Physics Letters, 108 (7).
072901-.
Text
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Abstract
We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5x1019cm-3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67x1012 cm-2 to -6.60x1012 cm-2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.
Item Type: | Article |
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Subjects: | ?? QC ?? ?? QD ?? |
Depositing User: | Symplectic Admin |
Date Deposited: | 04 Mar 2016 08:54 |
Last Modified: | 15 Mar 2024 06:58 |
DOI: | 10.1063/1.4942093 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/2053524 |