Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

Butera, S, Vines, P, Tan, CH, Sandall, I ORCID: 0000-0003-3532-0373 and Buller, GS (2016) Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. ELECTRONICS LETTERS, 52 (5). pp. 385-386.

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Official URL: http://dx.doi.org/10.1049/el.2015.3995

Abstract

Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	08 Apr 2016 08:36
Last Modified:	18 Oct 2023 07:00
DOI:	10.1049/el.2015.3995
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000359