Evaluation of InAs quantum dots on Si as optical modulator

Sandall, IC ORCID: 0000-0003-3532-0373, Ng, JS, David, JPR, Liu, H and Tan, CH (2013) Evaluation of InAs quantum dots on Si as optical modulator. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (9). 094002-094002.

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Official URL: http://dx.doi.org/10.1088/0268-1242/28/9/094002

Abstract

The potential of using InAs quantum dots, epitaxially grown on a Si substrate, as an optical modulator have been investigated. By exploiting the quantum-confined Stark effect across the quantum dot layers we were able to increase the absorption in the dot layers at a chosen wavelength. This resulted in the first demonstration of an extinction ratio of 5.1 dB at 1310 nm with a reverse bias of 20 V. Higher extinction ratios of 8.6 dB at 7 V and 21.6 dB at 20 V bias were observed at a wavelength of 1355 nm. © 2013 IOP Publishing Ltd.

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	27 Apr 2016 15:09
Last Modified:	19 Jan 2023 07:37
DOI:	10.1088/0268-1242/28/9/094002
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000891