Nemr Noureddine, I, Sedghi, N 
ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036
(2016)
Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications.
In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania, Italy.
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Noureddine et al Rectennasx.pdf - Author Accepted Manuscript Download (1MB) |
Abstract
The performance of double dielectric (MIIM) resonant tunneling diodes using atomic layer deposited oxides of low (Al2O3) and high (Ta2O5) electron affinity (χ) is investigated. Varying the individual layer thickness of Ta2O5 with a 1 nm thick Al2O3, evidence for resonant tunneling is observed and related to the bound states in the quantum well established between the oxide layers. The results show good rectifying capability of resonant tunneling diodes at low turn-on voltage enabling their potential use for terahertz applications.
| Item Type: | Conference or Workshop Item (Unspecified) |
|---|---|
| Depositing User: | Symplectic Admin |
| Date Deposited: | 29 Jun 2016 13:50 |
| Last Modified: | 19 Jan 2023 07:35 |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3001879 |
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