Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping



Brunell, I, Sedghi, N ORCID: 0000-0002-2004-6159, Dawson, K ORCID: 0000-0003-3249-8328, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332
(2016) Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping. In: 16th International Atomic Layer Deposition Conference, 2016-7-24 - 2016-7-27, Dublin, Ireland.

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Date Deposited: 17 Aug 2016 14:44
Last Modified: 19 Jan 2023 07:33
URI: https://livrepository.liverpool.ac.uk/id/eprint/3002517