Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

Wu, Jingjin, Zhao, Yinchao, Zhao, Ce Zhou, Yang, Li, Lu, Qifeng, Zhang, Qian, Smith, Jeremy ORCID: 0000-0002-0212-2365 and Zhao, Yongming (2016) Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition. MATERIALS, 9 (8). E695-.

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Abstract

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

Item Type:	Article
Uncontrolled Keywords:	Zr-doped ZnO, atomic layer deposition, rapid thermal annealing, red-shift
Depositing User:	Symplectic Admin
Date Deposited:	13 Sep 2016 15:00
Last Modified:	19 Jan 2023 07:30
DOI:	10.3390/ma9080695
Open Access URL:	http://www.mdpi.com/1996-1944/9/8/695
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3003284