Velichko, AV, Kudrynskyi, ZR, Di Paola, DM, Makarovskiy, O, Kesaria, M, Krier, A, Sandall, I ORCID: 0000-0003-3532-0373, Tan, CH, Kovalyuk, ZD and Patanè, A
(2016)
Highly-mismatched InAs/InSe heterojunction diodes.
Applied Physics Letters, 109 (18).
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Abstract
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
Item Type: | Article |
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Depositing User: | Symplectic Admin |
Date Deposited: | 31 Oct 2016 14:42 |
Last Modified: | 19 Jan 2023 07:26 |
DOI: | 10.1063/1.4967381 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3004225 |