Highly-mismatched InAs/InSe heterojunction diodes



Velichko, AV, Kudrynskyi, ZR, Di Paola, DM, Makarovskiy, O, Kesaria, M, Krier, A, Sandall, I ORCID: 0000-0003-3532-0373, Tan, CH, Kovalyuk, ZD and Patanè, A
(2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18).

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Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 31 Oct 2016 14:42
Last Modified: 19 Jan 2023 07:26
DOI: 10.1063/1.4967381
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3004225