Barrier tuning of atomic layer deposited Ta₂O₅ and Al₂O₃ in double dielectric diodes

Noureddine, Ibrahim Nemr, Sedghi, Naser ORCID: 0000-0002-2004-6159, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Hall, Steve ORCID: 0000-0001-8387-1036 (2017) Barrier tuning of atomic layer deposited Ta₂O₅ and Al₂O₃ in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35 (1). 01a117-.

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Abstract

<jats:p>The performance of ultrathin atomic layer deposited dielectrics of low (Al2O3) and high (Ta2O5) electron affinity (χ) is investigated in metal-insulator-(insulator)-metal [MI(I)M] diodes. The conduction mechanisms in 4 nm thick atomic layer deposited Al2O3 and Ta2O5 single barrier MIM diodes are first studied to show the dominance of tunneling and thermally activated Poole–Frenkel emission, respectively, in these oxides. Varying the layer thickness of Ta2O5 with a 1 nm thick layer of Al2O3 shows evidence for resonant tunneling in double barrier MIIM structures and is correlated with the simulated bound states in the quantum well formed between the two dielectrics. These findings demonstrate experimental work on barrier tuning of resonant tunneling diodes with sufficient rectifying capability at a turn-on voltage as low as 0.32 V enabling their potential use in terahertz applications.</jats:p>

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	01 Feb 2017 15:09
Last Modified:	15 Mar 2024 03:07
DOI:	10.1116/1.4974219
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3005335

Available Versions of this Item

• Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes. (deposited 17 Nov 2016 08:04)
  • Barrier tuning of atomic layer deposited Ta₂O₅ and Al₂O₃ in double dielectric diodes. (deposited 01 Feb 2017 15:09) [Currently Displayed]