Benoit, M, de Mendizabal, J Bilbao, Casse, G ORCID: 0000-0002-8516-237X, Chen, H, Chen, K, Di Bello, FA, Ferrere, D, Golling, T, Gonzalez-Sevilla, S, Iacobucci, G et al (show 15 more authors)
(2016)
Results of the 2015 testbeam of a 180nm AMS High-Voltage CMOS sensor prototype.
JOURNAL OF INSTRUMENTATION, 11 (07).
P07019-P07019.
Abstract
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
Item Type: | Article |
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Additional Information: | 16 pages, 14 figures |
Uncontrolled Keywords: | Electronic detector readout concepts (solid-state), Particle tracking detectors (Solid-state detectors), Si microstrip and pad detectors, Solid state detectors |
Depositing User: | Symplectic Admin |
Date Deposited: | 27 Mar 2017 10:19 |
Last Modified: | 19 Jan 2023 07:08 |
DOI: | 10.1088/1748-0221/11/07/P07019 |
Open Access URL: | http://iopscience.iop.org/article/10.1088/1748-022... |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3006649 |