Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

Wiehe, Moritz, Wonsak, S ORCID: 0000-0001-6122-2086, Kuehn, S, Parzefall, U and Casse, G ORCID: 0000-0002-8516-237X (2018) Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 877. pp. 51-55.

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Official URL: http://dx.doi.org/10.1016/j.nima.2017.09.021

Abstract

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of −32 ° C, −27 ° C and −23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2×1014neq∕cm2 to 2×1016neq∕cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2×1016neq∕cm2 and compare the measurements to the parametrization models.

Item Type:	Article
Uncontrolled Keywords:	Silicon sensors, High irradiation environment, Reverse current measurement, Current related damage rate, Effective energy
Depositing User:	Symplectic Admin
Date Deposited:	06 Oct 2017 14:27
Last Modified:	19 Jan 2023 06:53
DOI:	10.1016/j.nima.2017.09.021
Open Access URL:	https://doi.org/10.1016/j.nima.2017.09.021
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3009828