A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Jin, Jidong, Zhang, Jiawei, Shaw, Andrew, Kudina, Valeriya, Mitrovic, I ORCID: 0000-0003-4816-8905, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Balocco, Claudio, Song, Aimin and Hall, S ORCID: 0000-0001-8387-1036 (2018) A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51 (6). 065102-065102.

Text J Phys D Jin et al Dec 2017.pdf - Author Accepted Manuscript Download (1MB)

Abstract

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17 × 107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13 × 1012 cm−2 eV−1, and the noise is dominated by the mechanism of random walk of electrons at the PtOx/ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.

Item Type:	Article
Uncontrolled Keywords:	zinc oxide, plasma-enhanced atomic layer deposition, Schottky diode, rectifier
Depositing User:	Symplectic Admin
Date Deposited:	04 Jan 2018 15:29
Last Modified:	19 Jan 2023 06:46
DOI:	10.1088/1361-6463/aaa4a2
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3015044