Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018)
Aluminium doped Ga2O3 for GaN MIS-HEMTs.
In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.
Text
Abs-WoDim2018-LeanneJones-final1.pdf - Author Accepted Manuscript Access to this file is restricted: awaiting official publication and publisher embargo. Download (335kB) |
Item Type: | Conference or Workshop Item (Unspecified) |
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Depositing User: | Symplectic Admin |
Date Deposited: | 25 Apr 2018 09:10 |
Last Modified: | 19 Jan 2023 06:35 |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3020576 |
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