Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys

Linhart, WM, Rajpalke, MK, Birkett, M ORCID: 0000-0002-6076-6820, Walker, D, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626 (2019) Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52 (4). 045105-045105.

This is the latest version of this item.

	Text GaNSb-T-Dep28-10-18.pdf - Author Accepted Manuscript Download (1MB)
	Text LinhartJPhysDApplPhys52(2019)045105.pdf - Published version Download (1MB)

Official URL: http://dx.doi.org/10.1088/1361-6463/aaeec9

Abstract

The temperature dependence of the band gap of GaNxSb1-x films with has been studied in the 1.1-3.3 m (0.35-1.1 eV) range using infrared absorption spectroscopy between 4.2 and 300 K. As with other dilute nitride semiconductors, the temperature dependence of the band gap is reduced by alloying with nitrogen when compared to the host binary compound. However, for GaNSb, the smallest variation of the band gap with temperature is observed for samples with the lowest N content for which the band gap is almost totally insensitive to temperature changes. This contrasts with the more widely studied GaNxAs1-x alloys in which the band gap variation with temperature decreases with increasing N content. The temperature-dependent absorption spectra are simulated within the so-called band anticrossing model of the interaction between the extended conduction band states of the GaSb and the localized states associated with the N atoms. The N next-nearest neighbor pair states are found to be responsible for the temperature insensitivity of the band gap of the GaNSb alloys as a result of their proximity to the conduction band edge giving them a more pronounced role than in GaNAs alloys.

Item Type:	Article
Uncontrolled Keywords:	GaSb, dilute nitride, band gap, band anticrossing, GaNSb
Depositing User:	Symplectic Admin
Date Deposited:	22 Nov 2018 11:39
Last Modified:	19 Jan 2023 01:12
DOI:	10.1088/1361-6463/aaeec9
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3029007