Bao, Wei, Su, Zhicheng, Zheng, Changcheng, Ning, Jiqiang and Xu, Shijie
(2016)
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy.
SCIENTIFIC REPORTS, 6 (1).
34545-.
Abstract
Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.
| Item Type: | Article |
|---|---|
| Depositing User: | Symplectic Admin |
| Date Deposited: | 07 Feb 2019 13:48 |
| Last Modified: | 19 Jan 2023 01:05 |
| DOI: | 10.1038/srep34545 |
| Open Access URL: | https://www.nature.com/articles/srep34545 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3032450 |
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