Omar, A, Burdin, S 
ORCID: 0000-0003-4831-4132, Casse, G ORCID: 0000-0002-8516-237X, van Zalinge, H ORCID: 0000-0003-0996-1281, Powel, S, Rees, J, Smith, A and Tsurin, I
(2019)
GAMBE: Thermal neutron detection system based on a sandwich configuration of silicon semiconductor detector coupled with neutron reactive material.
Radiation Measurements, 122.
pp. 121-125.
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Abstract
© 2019 Elsevier Ltd Silicon semiconductor detectors are used efficiently for neutron detection when coated with a suitable material. They detect secondary reaction products resulting from the interaction of thermal neutrons with a neutron sensitive material such as 6 LiF. In the present work, the efficiency of the thermal neutron detector system, GAMBE, is discussed. This detector system based on two silicon sensors of 1 cm 2 active area and a layer of 6 LiF (1.5±0.6) mg/cm 2 thick in a sandwich configuration. This arrangement achieves total and coincidence detection efficiency of (4.1±0.5)% and (0.9±0.3)% respectively. The coincidence method defines a true neutron hit by the simultaneous signal recorded by the two sensors facing the conversion film. This coincidence methodology is applied to enhance the rejection factor of fake hits due to high gamma background conditions up to 10 8 as discussed in previous work. Geant simulation indicates that total and coincidence detection efficiency up to 55% and 18% are possible using an advanced design of stacked detectors.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Neutron detector, Semiconductor detector, Coated semiconductor detector, Neutron detection, Neutron conversion |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 10 Feb 2020 09:27 |
| Last Modified: | 19 Jan 2023 00:57 |
| DOI: | 10.1016/j.radmeas.2019.01.019 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3034082 |
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