Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters


Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors) (2019) Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics, 58 (5). 056505-056505.

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Abstract

Power integration is essential for the fully utilization of advanced GaN devices in power conversion applications due to the reduced parasitic inductance, low on-state resistance, and high-temperature operation. This paper presents a GaN-based monolithic integration design with optimized gate drivers for high-temperature DC-DC converters. Four different gate drivers are experimentally evaluated for integration with boost converters based on enhancement (E)-mode AlGaN/GaN metal-insulator-semiconductor heterojunction-field-effect-transistors (MIS-HFETs). The optimized gate driver, consisting of DCFL (Direct-Coupled FET Logic) inverters and a buffer amplifier, can operate over a wide temperature range (from 25 °C to 250 °C). Furthermore, a 100 kHz, 5 V/11 V (V IN/V OUT) boost converter prototype with the proposed monolithic integration design was built and found to operate successfully under high temperatures (HTs) up to 250 °C. These results validate the advantages of GaN-based monolithic integration techniques in achieving HT, high power density, and high efficiency power converters.

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 27 Mar 2019 08:16
Last Modified: 19 Jan 2023 00:56
DOI: 10.7567/1347-4065/ab1313
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3035022
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