Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions



Cosham, Samuel D, Richards, Stephen P, Manning, Troy ORCID: 0000-0002-7624-4306, Hill, Michael S, Johnson, Andrew L and Molloy, Kieran C
(2017) Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2017 (13). pp. 1868-1876.

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Abstract

<jats:p>A series of unsymmetrical nickel β‐diketonate derivatives have been synthesised and structurally characterised for application as atmospheric‐pressure metal–organic chemical vapour deposition (AP‐MOCVD) precursors for nickel oxide. (TMEDA)Ni[MeC(O)CHC(O)OEt]<jats:sub>2</jats:sub> (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)‐coated glass; the work function of the ITO was raised as a consequence.</jats:p>

Item Type: Article
Uncontrolled Keywords: Chemical vapor deposition, Nickel, Precursors, Semiconductors, Thin films
Depositing User: Symplectic Admin
Date Deposited: 08 Apr 2019 15:06
Last Modified: 18 Sep 2023 18:26
DOI: 10.1002/ejic.201601419
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3036200