Bias-voltage dependent STM images from the 2-fold surface of the icosahedral Ag-In-Yb quasicrystal

Burnie, Dominic, Coates, Sam, McGrath, Ronan ORCID: 0000-0002-9880-5741 and Sharma, Hem Raj ORCID: 0000-0003-0456-6258 (2020) Bias-voltage dependent STM images from the 2-fold surface of the icosahedral Ag-In-Yb quasicrystal. In: 14th International Conference on Quasicrystals.

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Official URL: http://dx.doi.org/10.1088/1742-6596/1458/1/012017

Abstract

<jats:title>Abstract</jats:title> <jats:p>The 2–fold surface of the icosahedral (<jats:italic>i</jats:italic>-)Ag–In–Yb quasicrystal has been investigated using scanning tunnelling microscopy (STM). STM data reveals a bias-voltage dependency. At high positive bias, bright protrusions are observed. At negative bias, new protrusions appear while the size of the original protrusions decreases. The STM features at both positive and negative bias polarities can be related to atomic planes intersecting the centre of Tsai-type clusters (the building blocks of the bulk structure). The bias-dependency can be explained by a change in contribution in tunnelling current from Yb and Ag/In, as expected from density of states calculations.</jats:p>

Item Type:	Conference or Workshop Item (Unspecified)
Depositing User:	Symplectic Admin
Date Deposited:	28 Oct 2019 16:52
Last Modified:	19 Jan 2023 00:21
DOI:	10.1088/1742-6596/1458/1/012017
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3059745