Mariotti, Silvia, Al Turkestani, Mohammed, Hutter, Oliver S, Papageorgiou, Georgios, Major, Jonathan D 
ORCID: 0000-0002-5554-1985, Swallow, Jack, Nayak, Pabitra K, Snaith, Henry J, Dhanak, Vinod R ORCID: 0000-0001-8053-654X and Durose, Ken ORCID: 0000-0003-1183-3211
(2020)
Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications.
IEEE JOURNAL OF PHOTOVOLTAICS, 10 (4).
pp. 945-951.
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Mariotti_Direct_Si-MAPI heterostructures_IEEE_JPV.pdf - Author Accepted Manuscript Download (1MB) | Preview |
Abstract
We investigated the formation of photovoltaic (PV) devices using direct n-Si/MAPI (methylammonium lead tri-iodide) two-sided heterojunctions for the first time (as a possible alternative to two-terminal tandem devices) in which charge might be generated and collected from both the Si and MAPI. Test structures were used to establish that the n-Si/MAPI junction was photoactive and that spiro-OMeTAD acted as a 'pinhole blocking' layer in n-Si/MAPI devices. Two-terminal 'substrate' geometry devices comprising Al/n-Si/MAPI/spiro-OMeTAD/Au were fabricated and the effects of changing the thickness of the semitransparent gold electrode and the silicon resistivity were investigated. External quantum efficiency and capacitance-voltage measurements determined that the junction was one-sided in the silicon - and that the majority of the photocurrent was generated in the silicon, with there being a sharp cutoff in photoresponse above the MAPI bandgap. Construction of band diagrams indicated the presence of an upward valence band spike of up to 0.5 eV at the n-Si/MAPI interface that could impede carrier flow. Evidence for hole accumulation at this feature was seen in both Kelvin-probe transients and from unusual features in both current-voltage and capacitance-voltage measurements. The devices achieved a hysteresis-free best power conversion efficiency of 2.08%, VOC 0.46 V, JSC 11.77 mA/cm2, and FF 38.4%, demonstrating for the first time that it is possible to create a heterojunction PV device directly between the MAPI and n-Si. Further prospects for two-sided n-Si/MAPI heterojunctions are also discussed.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Silicon, Gold, Lead, Heterojunctions, Photovoltaic systems, Heterojunctions, heterostructures, MAPI, silicon methylammonium lead iodide, methylammonium lead tri-iodide (MAPI), silicon |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 24 Apr 2020 14:47 |
| Last Modified: | 15 Mar 2024 03:48 |
| DOI: | 10.1109/JPHOTOV.2020.2981805 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3084313 |
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