Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices



Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Zhao, Cezhou
(2020) Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8. pp. 95642-95649.

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Abstract

In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated. High-k dielectrics are adopted as the passivation layer on MIS-HEMTs to suppress the shallow traps on the GaN surface. Besides, high permittivity dielectrics passivated MIS-HEMTs also show an improved breakdown voltage characteristic, and that is explained by 2-D simulation analysis. The fabricated devices with high-k dielectrics/SiNx bilayer passivation exhibit higher power properties than the devices with plasma enhanced chemical vapor deposition-SiNx single layer passivation, including smaller current collapse and higher breakdown voltage. The Al2O3/SiNx passivated MIS-HEMTs exhibit a breakdown voltage of 1092 V, and the dynamic Ron is only 1.14 times the static Ron after off-state VDS stress of 150 V. On the other hand, the ZrO2/SiNx passivated MIS-HEMTs exhibit a higher breakdown voltage of 1207 V, and the dynamic Ron is 1.25 times the static Ron after off-state VDS stress of 150 V.

Item Type: Article
Uncontrolled Keywords: Passivation, Gallium nitride, Dielectrics, Logic gates, High-k dielectric materials, Stress, Aluminum gallium nitride, AlGaN, GaN, MIS-HEMTs, Si2N4, high-k, Al2O3, ZrO2, current collapse, dynamic on-resistance, breakdown voltage
Depositing User: Symplectic Admin
Date Deposited: 03 Jun 2020 08:58
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/access.2020.2995906
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3089318