Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne, Gibbon, James, Dhanak, Vinod R, Mahapatra, Rajat, Partida Manzanera, Teresa ORCID: 0000-0002-2834-6340, Roberts, Joseph W, Potter, Richard J ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332 et al (show 2 more authors)
(2020)
(Invited) Band Line-up of High-k Oxides on GaN.
ECS Transactions, 97 (1).
pp. 67-81.
Text
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Abstract
<jats:p>We present comprehensive experimental work on Ti<jats:sub>x</jats:sub>Al<jats:sub>1-x</jats:sub>O<jats:sub>y</jats:sub> (with x = 9%, 16%, 25%, 36%, 100%) and Ga<jats:sub>x</jats:sub>Al<jats:sub>1-x</jats:sub>O<jats:sub>y</jats:sub> (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition with the aim of achieving favorable band alignment with GaN for device applications. The permittivity, k, has been found to be enhanced from ~10 for 9% Ti to 76 for TiO<jats:sub>2</jats:sub>, but brings unfavorable band line-up and a small conduction band offset (< 0.1 eV) with GaN for all Ti% studied. On the other hand, Ga<jats:sub>x</jats:sub>Al<jats:sub>1-x</jats:sub>O<jats:sub>y</jats:sub> (x = 5%, 20%) films show substantial increase of the band gap from 4.5 eV for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> to 5.5 eV for x = 5% Ga and 6.0 eV for x = 20% Ga in mixed oxides and a strong suppression of leakage current in associated metal insulator semiconductor (MIS) capacitors.</jats:p>
Item Type: | Article |
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Depositing User: | Symplectic Admin |
Date Deposited: | 03 Jun 2020 08:00 |
Last Modified: | 18 Jan 2023 23:50 |
DOI: | 10.1149/09701.0067ecst |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3089354 |