Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors

Liu, Qihan, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Xu, Wangying, Yang, Li and Zhao, Ce Zhou (2020) Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors. Advanced Electronic Materials, 6 (8). p. 2000072.

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Abstract

<jats:title>Abstract</jats:title><jats:p>Solution‐processed metal‐oxide thin films have been widely studied in low‐power and flexible electronics. However, the high temperature required to form a condensed and uniform film limits their applications in flexible and low‐cost electronics. Here, a novel and environmental‐friendly comproportionation reaction synthesis (CRS) is presented to obtain amorphous aluminum oxide (AlO<jats:italic><jats:sub>x</jats:sub></jats:italic>) thin films for solution‐processed thin‐film transistors (TFTs) employing water as the precursor solvent. The thermal decomposition of CRS‐AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> precursor is completed at ≈300 °C, which is 100 °C lower than that of the conventional water‐induced AlO<jats:italic><jats:sub>x</jats:sub></jats:italic>. The morphological, optical, compositional, and electrical properties of CRS‐AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> dielectric films are studied systematically. Meanwhile, TFTs based on water‐induced In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> metal oxide semiconductor layers deposited on these dielectrics at low temperatures are formed and characterized. Compared with TFTs based on conventional AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> showing low mobility and low clockwise hysteresis, In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> TFTs based on CRS‐AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> exhibit improved electrical performance and counterclockwise hysteresis in the transfer curves. Water‐induced TFTs fabricated on CRS‐AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> formed at a low temperature of 250 °C have average mobility of 98 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>. Through chemical composition characterization and electrical characterization, the high mobilities of TFTs based on CRS‐AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> dielectrics are correlated to trap states, which resulted in counterclockwise hysteresis in the transfer curves.</jats:p>

Item Type:	Article
Uncontrolled Keywords:	aqueous route, low operating voltage, low temperature processing, metal-oxide thin-film transistors, solution combustion synthesis
Depositing User:	Symplectic Admin
Date Deposited:	30 Jul 2020 11:30
Last Modified:	18 Sep 2023 19:25
DOI:	10.1002/aelm.202000072
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3095349