Lane, D, Hodgson, PD, Potter, RJ ORCID: 0000-0003-0896-4536, Beanland, R and Hayne, M
(2021)
ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory.
IEEE Transactions on Electron Devices, 68 (5).
pp. 1-4.
Abstract
ULTRARAM is a III-V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a 2×2 memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500-μs duration, a remarkable switching speed for a 20μm gate length. Memory retention is tested for 8× 104 s, whereby the 0/1 states show adequate contrast throughout, whilst performing 8× 104 readout operations. Further reliability is demonstrated via program-read-erase-read endurance cycling for 106 cycles with 0/1 contrast. A half-voltage array architecture proposed in our previous work is experimentally realized, with an outstandingly small disturb rate over 105 half-voltage cycles.
Item Type: | Article |
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Uncontrolled Keywords: | InAs/AlSb, memory, non-volatile memory (NVM), non-volatile RAM (NVRAM), resonant tunneling |
Divisions: | Faculty of Science and Engineering > School of Engineering |
Depositing User: | Symplectic Admin |
Date Deposited: | 16 Apr 2021 07:17 |
Last Modified: | 15 Mar 2024 07:50 |
DOI: | 10.1109/ted.2021.3064788 |
Open Access URL: | https://doi.org/10.1109/TED.2021.3064788 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3119385 |