ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory



Lane, D, Hodgson, PD, Potter, RJ ORCID: 0000-0003-0896-4536, Beanland, R and Hayne, M
(2021) ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68 (5). pp. 1-4.

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Abstract

ULTRARAM is a III-V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a 2×2 memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500-μs duration, a remarkable switching speed for a 20μm gate length. Memory retention is tested for 8× 104 s, whereby the 0/1 states show adequate contrast throughout, whilst performing 8× 104 readout operations. Further reliability is demonstrated via program-read-erase-read endurance cycling for 106 cycles with 0/1 contrast. A half-voltage array architecture proposed in our previous work is experimentally realized, with an outstandingly small disturb rate over 105 half-voltage cycles.

Item Type: Article
Uncontrolled Keywords: InAs/AlSb, memory, non-volatile memory (NVM), non-volatile RAM (NVRAM), resonant tunneling
Divisions: Faculty of Science and Engineering > School of Engineering
Depositing User: Symplectic Admin
Date Deposited: 16 Apr 2021 07:17
Last Modified: 15 Mar 2024 07:50
DOI: 10.1109/ted.2021.3064788
Open Access URL: https://doi.org/10.1109/TED.2021.3064788
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3119385