Almalki, S, Tekin, SB, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036 and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2021)
Applicability of Sc<sub>2</sub>O<sub>3</sub> versus Al<sub>2</sub>O<sub>3</sub> in MIM rectifiers for IR rectenna.
SOLID-STATE ELECTRONICS, 184.
p. 108082.
Text
Almalki et al_INFOS2021-SSE Letters-final clean copy.docx - Author Accepted Manuscript Download (186kB) |
Abstract
Impedance matching between the terahertz antenna and ultra-fast Metal-Insulator-Metal (MIM) diode is a crucial issue in realizing rectenna technology for harvesting infrared (IR) energy spectrum. In this paper, scandium oxide (Sc2O3)-based MIM diodes were fabricated using magnetron sputtering and their rectification performance compared to state-of-the-art Au/Al2O3/Au diodes. The fabricated Al/Sc2O3/Al diode has exhibited around two orders of magnitude lower zero-bias dynamic resistance (RD0 = 956 kΩ) and high zero-bias responsivity (β0 = 1 A/W) in advance to Au/Al2O3/Au diode. The results point to applicability of scandium oxide in MIM rectifiers for IR rectenna.
Item Type: | Article |
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Uncontrolled Keywords: | Dielectric, Rectifier, Rectenna, Sc2O3, Al2O3 |
Divisions: | Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science |
Depositing User: | Symplectic Admin |
Date Deposited: | 01 Jun 2021 14:22 |
Last Modified: | 17 Oct 2023 21:30 |
DOI: | 10.1016/j.sse.2021.108082 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3124757 |