Performance variation of solution-processed memristor induced by different top electrode

Shen, Zongjie, Zhao, Chun, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Cezhou (2021) Performance variation of solution-processed memristor induced by different top electrode. SOLID-STATE ELECTRONICS, 186. p. 108132.

Text Shen et al-Solid State Electronic-Dec2021-final accepted version.docx - Author Accepted Manuscript Download (2MB)

Abstract

Al/TE (top electrode)/AlOx/Pt RRAM (resistive random access memory) devices with solution-processed spin-coated AlOx layers annealed at various temperatures (225/250/275 °C) exhibited typical bipolar resistive switching performance with low SET/RESET voltage (<4 V), larger ON/OFF ratio (>103) and excellent stability (retention time over 104 s and endurance cycles more than 100). Ni and TiN were chosen as the TE, respectively. Better RS characteristics were obtained on Ni/AlOx/Pt RRAM devices with lower operating voltage and better stability. In addition, the voltage variation between Ni/AlOx/Pt and TiN/AlOx/Pt RRAM devices was investigated. Compared with Ni/AlOx/Pt RRAM devices, TiN/AlOx/Pt devices operated with higher operation voltage at various annealing temperatures, which indicated the influence of work function difference (△ΦM) between TE and BE (bottom electrode). The greater the △ΦM, the more energy consumption and the higher operation voltage were demanded.

Item Type:	Article
Uncontrolled Keywords:	Solution-processed, Work function difference, RRAM
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	26 Jan 2022 11:28
Last Modified:	18 Jan 2023 21:14
DOI:	10.1016/j.sse.2021.108132
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3147619