Noureddine, I Nemr, Sedghi, N 
ORCID: 0000-0002-2004-6159, Wrench, JS, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2022)
<p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>.
SOLID-STATE ELECTRONICS, 194.
p. 108349.
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Noureddine et al SSE Apr 2022.pdf - Author Accepted Manuscript Download (2MB) | Preview |
Abstract
Multi-stack metal–insulator-metal diodes devices of atomic layer deposited (ALD) and sputtered Ta2O5 and Al2O3 dielectrics with Au bottom electrode are investigated comprehensively by experiment and modelling. The layer structure is inspected - and the native contact metal oxide effects are incorporated in the modelling computation - using atomic force microscopy (AFM), spectroscopic ellipsometry, and transmission electron spectroscopy (TEM). The tunnelling transport is successfully modelled using both the transfer matrix (TMM) and Wentzel-Kramers-Brillouin (WKB) methods. Parasitic currents are identified using their voltage and temperature dependence. Rectification for a triple dielectric layer device is shown to occur at a turn-on voltage as low as 170 mV with a non-linearity of 3 and an asymmetry increasing from 2.2 at the turn-on voltage to over two orders of magnitude at 1 V.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Multi-dielectric diode, Native oxide, Tunnelling, Tsu-Esaki model, Transfer matrix method, WKB approximation, THz rectification, Rectenna |
| Divisions: | Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 22 Apr 2022 08:30 |
| Last Modified: | 18 Oct 2023 07:42 |
| DOI: | 10.1016/j.sse.2022.108349 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3153628 |
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