A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.

Sun, Zhonghao, Huang, Huolin, Sun, Nan, Tao, Pengcheng, Zhao, Cezhou ORCID: 0000-0002-4933-9692 and Liang, Yung C ORCID: 0000-0002-5716-0713 (2019) A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure. Micromachines, 10 (12). E848-.

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Official URL: http://dx.doi.org/10.3390/mi10120848

Abstract

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mΩ·cm<sup>2</sup> while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

Item Type:	Article
Uncontrolled Keywords:	gallium nitride, high electron mobility transistors, normally-off operation, vertical gate structure, wide-bandgap semiconductor
Depositing User:	Symplectic Admin
Date Deposited:	04 Oct 2022 10:57
Last Modified:	01 Feb 2024 11:59
DOI:	10.3390/mi10120848
Open Access URL:	https://www.mdpi.com/2072-666X/10/12/848
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3165189