Tekin, Serdar B, Almalki, Saeed, Vezzoli, Andrea 
ORCID: 0000-0002-8059-0113, O’Brien, Liam, Hall, Steve ORCID: 0000-0001-8387-1036, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905
(2022)
(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas.
.
|
PDF
Tekin et al-Full Paper-ECS-22_ff1.pdf - Author Accepted Manuscript Download (914kB) | Preview |
Abstract
<jats:p>Metal-Insulator-Metal (MIM) rectifiers comprising thin films of Al2O3, ZnO, NiO and Nb2O5 and metal configurations of Au/Au, Au/Zn and AuCr/AuCr, have been fabricated using atomic layer deposition and radio-frequency sputtering. The effect of device area scaling from 104 µm2 to 1 µm2 on rectification properties, in particular zero-bias dynamic resistance (R0) and zero-bias responsivity (β0) has been studied and found to be of critical importance in improving diode coupling efficiency. A significant increase of current has been found for Au/3.3 nm ZnO/Au diode when compared to the reference Au/3 nm Al2O3/Au diode, that resulted in obtaining the lowest R0 of 540 W for a device area of 104 µm2. The best performing device is found to be 1 µm2 AuCr/6.77 nm NiO/AuCr featuring (R0, b0) = (461 kW, 0.76 A/W) and a coupling efficiency of 1.5 ´ 10-5 %.</jats:p>
| Item Type: | Conference or Workshop Item (Unspecified) |
|---|---|
| Divisions: | Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science Faculty of Science and Engineering > School of Engineering Faculty of Science and Engineering > School of Physical Sciences |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 11 Oct 2022 08:07 |
| Last Modified: | 18 Jan 2023 20:40 |
| DOI: | 10.1149/10802.0069ecst |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3165196 |
Dimensions
Dimensions
