Powell, S, Hammerich, J, Karim, N, Vilella, E and Zhang, C ORCID: 0000-0001-6135-3131
(2023)
Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process.
Journal of Instrumentation, 18 (01).
C01009-C01009.
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Abstract
<jats:title>Abstract</jats:title> <jats:p>This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit — the rest of the circuit is entirely designed with Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.</jats:p>
Item Type: | Article |
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Uncontrolled Keywords: | Particle tracking detectors, Radiation-hard detectors, Solid state detectors |
Divisions: | Faculty of Science and Engineering > School of Physical Sciences |
Depositing User: | Symplectic Admin |
Date Deposited: | 11 Jan 2023 12:21 |
Last Modified: | 08 Mar 2023 07:28 |
DOI: | 10.1088/1748-0221/18/01/c01009 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3166996 |