Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process



Powell, S, Hammerich, J, Karim, N, Vilella, E and Zhang, C ORCID: 0000-0001-6135-3131
(2023) Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process. Journal of Instrumentation, 18 (01). C01009-C01009.

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Abstract

<jats:title>Abstract</jats:title> <jats:p>This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit — the rest of the circuit is entirely designed with Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.</jats:p>

Item Type: Article
Uncontrolled Keywords: Particle tracking detectors, Radiation-hard detectors, Solid state detectors
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 11 Jan 2023 12:21
Last Modified: 08 Mar 2023 07:28
DOI: 10.1088/1748-0221/18/01/c01009
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3166996