Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>



Nicol, D, Oshima, Y, Roberts, JW, Penman, L, Cameron, D, Chalker, PR ORCID: 0000-0002-2295-6332, Martin, RW and Massabuau, FC-P
(2023) Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. APPLIED PHYSICS LETTERS, 122 (6). 062102-.

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Abstract

<jats:p>Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.</jats:p>

Item Type: Article
Divisions: Faculty of Science and Engineering > School of Engineering
Depositing User: Symplectic Admin
Date Deposited: 07 Feb 2023 14:42
Last Modified: 15 Mar 2024 06:57
DOI: 10.1063/5.0135103
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3168255