Nicol, D, Oshima, Y, Roberts, JW, Penman, L, Cameron, D, Chalker, PR ORCID: 0000-0002-2295-6332, Martin, RW and Massabuau, FC-P
(2023)
Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>.
APPLIED PHYSICS LETTERS, 122 (6).
062102-.
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Abstract
<jats:p>Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.</jats:p>
Item Type: | Article |
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Divisions: | Faculty of Science and Engineering > School of Engineering |
Depositing User: | Symplectic Admin |
Date Deposited: | 07 Feb 2023 14:42 |
Last Modified: | 15 Mar 2024 06:57 |
DOI: | 10.1063/5.0135103 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3168255 |