Augustin, H, Berger, N, Dittmeier, S, Hammerich, J 
ORCID: 0000-0002-5556-1775, Herkert, A, Huth, L, Immig, D, Kroeger, J, Meier, F, Peric, I et al (show 4 more authors)
(2018)
Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 905.
pp. 53-60.
Abstract
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to $5.0\cdot10^{15}{\,\rm{n}_{\rm{eq}}/cm^2}$) and protons (up to $7.8\cdot 10^{15} \,\rm{protons}/cm^2$) and compare the performance with non-irradiated sensors. Efficiencies well above 90 % at noise rates below 200 Hz per pixel are measured. A time resolution better than 22 ns is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | HV-CMOS, Monolithic active pixel sensors, Radiation-hard detectors, Particle tracking detectors |
| Divisions: | Faculty of Science and Engineering > School of Physical Sciences |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 27 Jul 2023 14:29 |
| Last Modified: | 27 Jul 2023 14:29 |
| DOI: | 10.1016/j.nima.2018.07.044 |
| Open Access URL: | https://arxiv.org/pdf/1712.03921.pdf |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3171941 |
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