GaN-based monolithic integrated power converter circuit design and associated application


Zhu, Yuhao (2023) GaN-based monolithic integrated power converter circuit design and associated application. PhD thesis, University of Liverpool.

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Abstract

Gallium nitride (GaN) devices are promising for power conversion applications due to their superior high breakdown voltage, high-temperature operation, and fast switching performance. All-GaN monolithic integration power systems circuit is utilized to reduce the chip size and to eliminate the parasitic parameters between the pre-driver module and power transistors. GaN MIS-HEMTs fabricated with the recessed gate method have high gate withstand voltages and small gate leakage by introducing an insulating layer in the gate region. Circuit and application development of GaN-based power semiconductor devices are investigated in this thesis.

Item Type: Thesis (PhD)
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 08 Feb 2024 11:43
Last Modified: 08 Feb 2024 11:44
DOI: 10.17638/03176926
Supervisors:
  • Liu, Wen
  • Goulermas, John
  • Wen, Huiqing
URI: https://livrepository.liverpool.ac.uk/id/eprint/3176926
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