Zhang, C ORCID: 0000-0001-6135-3131, Pilsl, B, Powell, S, Vilella, E, Zhang, S, Bergauer, T, Casanova, R, Irmler, C, Kraemer, U, Marco-Hernandez, R et al (show 4 more authors)
(2024)
RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance.
Journal of Instrumentation, 19 (04).
C04059-C04059.
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Abstract
<jats:title>Abstract</jats:title> <jats:p>A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 CMOS working group for potential use in future high luminosity experiments. The aim is to further improve the performance of HV-CMOS sensors, especially in terms of pixel granularity, timing resolution and radiation tolerance. The evaluation of one of this series, RD50-MPW3, is presented in this contribution, including laboratory and test beam measurements. The design of the latest prototype, RD50-MPW4, which resolves issues found in RD50-MPW3 and implements further improvements, is described. </jats:p>
Item Type: | Article |
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Divisions: | Faculty of Science and Engineering > School of Physical Sciences |
Depositing User: | Symplectic Admin |
Date Deposited: | 29 Apr 2024 08:33 |
Last Modified: | 10 May 2024 13:59 |
DOI: | 10.1088/1748-0221/19/04/c04059 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3180621 |