Fluorine doped ZnO thin films by RF magnetron sputtering

Treharne, RE and Durose, K ORCID: 0000-0003-1183-3211 (2011) Fluorine doped ZnO thin films by RF magnetron sputtering. Thin Solid Films, 519 (21). pp. 7579-7582.

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Abstract

Growth of ZnO films by reactive RF sputtering in ambients of Ar-H 2 and Ar-H2-CHF3 has been investigated as a function of the reactive gas partial pressure (ppx%), substrate temperature and sputtering power. Use of H2 reduces the resistivity of ZnO by a factor of 104, with doping through use of CHF3 giving a further factor of 10 decrease. The lowest resistivity (2.9 × 10 - 3 Ω cm) was achieved using ppH2 = 5%, ppCHF 3 = 4% in a total pressure of 5 mTorr made up with Ar. An optical transmittance of > 80% in the visible range was achieved for all doped films. Analysis of Burstein-Moss shifts in measured indirect and direct band-gap values for doped films yield values for the electron and hole effective masses of 0.5 m0 and 1.2 m0 respectively, according to a parabolic band model. © 2011 Elsevier B.V.

Item Type:	Article
Additional Information:	Issue date: 31 August 2011. Available online 22 December 2010. Special issue : Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials.
Uncontrolled Keywords:	Zinc oxide, Fluorine doping, Magnetron sputtering, Optical and electrical characterisation
Subjects:	?? QC ??
Divisions:	Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	21 May 2012 16:14
Last Modified:	17 Dec 2022 00:45
DOI:	10.1016/j.tsf.2010.12.126
Related URLs:	Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/6093