Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation


Anders, J, Benoit, M, Braccini, S, Casanova, R, Chen, H, Chen, K, Di Bello, FA, Fehr, A, Ferrere, D, Forshaw, D et al (show 20 more authors) (2018) Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. JOURNAL OF INSTRUMENTATION, 13 (10). P10004-P10004.

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Abstract

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

Item Type: Article
Uncontrolled Keywords: Particle tracking detectors (Solid-state detectors), Radiation-hard detectors, Solid state detectors
Depositing User: Symplectic Admin
Date Deposited: 04 Dec 2019 15:33
Last Modified: 19 Jan 2023 00:17
DOI: 10.1088/1748-0221/13/10/P10004
Open Access URL: https://doi.org/10.1088/1748-0221/13/10/P10004
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3064811
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