Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Wrench, JS, Brunell, IF, Chalker, PR ORCID: 0000-0002-2295-6332, Jin, JD, Shaw, A, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2014) Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105 (20). pp. 1-202109.

Text Applied Physics Letters Volume 105, Issue 20, 17 November 2014, Article number 202109.pdf - Unspecified Download (333kB)

Abstract

<jats:p>Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles. A blue-shift of the near band-edge photoluminescence after post-deposition annealing at 300 °C indicates significant activation of the Mg dopant. A 7:1 ratio of ZnO:MgO deposition cycles was used to fabricate a device with a TFT channel width of 2000 μm and a channel length of 60 μm. This transistor yielded an effective saturation mobility of 4 cm2/V s and a threshold voltage of 7.1 V, respectively. The on/off ratio was 1.6×106 and the maximum interface state density at the ZnO/SiO2 interface is ∼6.5×1012 cm−2.</jats:p>

Item Type:	Article
Subjects:	?? QC ?? ?? QD ??
Depositing User:	Symplectic Admin
Date Deposited:	19 Dec 2014 15:49
Last Modified:	26 Jun 2023 20:31
DOI:	10.1063/1.4902389
Publisher's Statement :	Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 105, 202109 (2014); doi: 10.1063/1.4902389 and may be found at http://dx.doi.org/10.1063/1.4902389 .
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URI:	https://livrepository.liverpool.ac.uk/id/eprint/2003979