Compositional tuning of atomic layer deposited MgZnO for thin film transistors



Wrench, JS, Brunell, IF, Chalker, PR ORCID: 0000-0002-2295-6332, Jin, JD, Shaw, A, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036
(2014) Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105 (20).

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Applied Physics Letters Volume 105, Issue 20, 17 November 2014, Article number 202109.pdf

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Item Type: Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Depositing User: Symplectic Admin
Date Deposited: 19 Dec 2014 15:49
Last Modified: 09 Jan 2021 08:51
DOI: 10.1063/1.4902389
Publisher's Statement : Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 105, 202109 (2014); doi: 10.1063/1.4902389 and may be found at http://dx.doi.org/10.1063/1.4902389 .
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URI: https://livrepository.liverpool.ac.uk/id/eprint/2003979