Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics

Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Brunell, IF, Sutcliffe, CJ and Potter, RJ ORCID: 0000-0003-0896-4536
(2015) Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5 (1).

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We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60 degrees C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al2O3 films exhibit dielectric constants of 8 - 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Item Type: Article
Subjects: ?? Q1 ??
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Depositing User: Symplectic Admin
Date Deposited: 24 Feb 2015 11:15
Last Modified: 17 Aug 2022 15:20
DOI: 10.1063/1.4905887