Bi-induced band gap reduction in epitaxial InSbBi alloys

Rajpalke, Mohana, Linhart, Wojciech, Yu, KM, Birkett, Max ORCID: 0000-0002-6076-6820, Alaria, Jonathan ORCID: 0000-0001-5868-0318, Bomphrey, JJ, Sallis, S, Piper, LFJ, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097
et al (show 1 more authors) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105 (21). p. 212101.

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The properties of molecular beam epitaxy-grown InSb1−xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ∼35 meV/%Bi. The work at Liverpool and Warwick was supported by the University of Liverpool and the Engineering and Physical Sciences Research Council (EPSRC) under Grant Nos. EP/G004447/2 and EP/H021388/1. RBS measurements performed at Lawrence Berkeley National Lab were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Barry Karlin and Joe Woicik are thanked for use of the X24a HAXPES end station at the National Institute of Standards and Technology bending magnet beamline X24 at the National Synchrotron Light Source at Brookhaven National Laboratory. The National Synchrotron Light Source is supported by the U.S. Department of Energy, Contract No. DE-AC02-98CH10886. The work at Binghamton was supported by a Grant from State University of New York Research Foundation Collaboration Fund.

Item Type: Article
Subjects: ?? QC ??
Depositing User: Symplectic Admin
Date Deposited: 01 Dec 2015 11:00
Last Modified: 07 Aug 2023 20:44
DOI: 10.1063/1.4902442
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