'Hafnia on alumina and sulphur passivated germanium'

Althobaiti, M, Mather, S, Sedghi, N, Dhanak, VR, Mitrovic, IZ, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR (2014) 'Hafnia on alumina and sulphur passivated germanium'. In: Wodim 2014, Tyndall Institute, Ireland. (In Press)

There is a more recent version of this item available.

	Text (Journal article) Althobaiti-Vacuum-2015.pdf - Unspecified Access to this file is embargoed until Unspecified. Download (635kB)
	Text Althobaiti-Vacuum-2015.pdf - Unspecified Access to this file is embargoed until Unspecified. Download (635kB)
	Text Althobaiti-Vacuum-2015.pdf - Unspecified Access to this file is embargoed until Unspecified. Download (635kB)

Official URL: http://www.elsevier.com/locate/vacuum

Abstract

In this work hafnia (HfO2) and alumina (Al2O3) films were deposited on germanium, using either water or oxygen plasma as the oxidant, by atomic layer deposition at 250 °C with and without sulphur passivation of the substrate. X-ray photoelectron spectroscopy was carried out to investigate the interface between both HfO2 and Al2O3 films and germanium. The results show that for hafnia and alumina deposited with water on pre-sulphur treated germanium there is negligible GeOx formation when compared to films grown using oxygen plasma. The results support the case for sulphur passivation of the interface.

Item Type:	Conference or Workshop Item (Unspecified)
Additional Information:	## TULIP Type: Conference Proceedings (contribution) ##
Depositing User:	Symplectic Admin
Date Deposited:	01 Jun 2015 12:44
Last Modified:	15 Mar 2024 03:07
DOI:	10.1016/j.vacuum.2015.03.017
Related URLs:	http://www.elsevier.com/locate/vacuum
URI:	https://livrepository.liverpool.ac.uk/id/eprint/2011487