Zirconium doped zinc oxide thin films deposited by atomic layer deposition

Herodotou, Stephania
Zirconium doped zinc oxide thin films deposited by atomic layer deposition. PhD thesis, University of Liverpool.

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Doped zinc oxide is of interest as a transparent conductive oxide (TCO), due to the abundance of its major constituents, its low resistivity, high transparency and wide bandgap. The current work focuses on the properties required for TCO applications including resistivity of ≤10-3 Ω•cm, carrier density of ≥1020 cm-3, and transparency >80% in the visible light. Zirconium (Zr4+) was chosen as the dopant in the current work due to its abundance, comparable ionic size to Zn and because it can act as a double donor providing up to two extra free electrons per ion when substituted for Zn2+. The doping process can be controlled using atomic layer deposition (ALD), with the doped films resulting in an increased conductivity. The films in the current work resulted in a minimum resistivity of 1.44×10-3 Ω•cm and maximum carrier density of 3.81×1020 cm-3 for films

Item Type: Thesis (PhD)
Additional Information: Date: 2015-06-05 (completed)
Subjects: ?? Q1 ??
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Depositing User: Symplectic Admin
Date Deposited: 30 Jul 2015 14:51
Last Modified: 17 Dec 2022 00:50
DOI: 10.17638/02013045
URI: https://livrepository.liverpool.ac.uk/id/eprint/2013045