X-ray standing wave study of Si clusters on a decagonal Al-Co-Ni quasicrystal surface


Woodruff, DP, Ledieu, J, Lovelock, KRJ, Jones, Robert G, Deyko, A, Wearing, LH, McGrath, Ronan ORCID: 0000-0002-9880-5741, Chaudhuri, A, Li, HI, Su, SY et al (show 3 more authors) (2015) X-ray standing wave study of Si clusters on a decagonal Al-Co-Ni quasicrystal surface. Physical Review B, 91 (11). 115418-.

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Abstract

Quantitative adsorption structure determinations on quasicrystals are scarce because most techniques for measuring surface structures are not well suited to the complex and infinite unit cells of quasicrystals. The normal incidence standing x-ray wave field technique presents a solution to these problems because it can be made inherently surface sensitive and does not involve extensive computational effort. We describe a method for applying this technique to adsorbates on quasicrystals, with specific application to a submonolayer of Si atoms on a decagonal Al-Co-Ni surface. We demonstrate the sensitivity of the technique to both adsorption site and geometry, leading to the conclusion that the Si atoms, which form six-atom pentagonal clusters, have an average height of 1.77±0.05Å above pentagonal hollow sites, with a significant height variation among the Si atoms in the cluster. In particular, the central Si atom sits more deeply than the five surrounding Si atoms, which are, on average, 2.7Å away from the central Si atom. Although this study was performed on a decagonal quasicrystal that is periodic perpendicular to the surface, we describe how the technique can be applied to cases with no periodicity.

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 20 Jul 2015 11:16
Last Modified: 15 Mar 2024 05:35
DOI: 10.1103/PhysRevB.91.115418
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URI: https://livrepository.liverpool.ac.uk/id/eprint/2016863
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