Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber

Veal, Tim ORCID: 0000-0002-0610-5626, Feldberg, Nathaniel, Quackenbush, Nicholas F, Linhart, Wojciech M, Scanlon, David O, Piper, Louis FJ and Durbin, Steven M
(2015) Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber. Advanced Energy Materials, 5 (24).

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The band gap of earth-abundant ZnSnN2 can be tuned between 1 and 2 eV by varying the growth conditions and resulting cation disorder. The optical absorption edges and carrier densities fall between model curves for cation-ordered orthorhombic and disordered wurtzite ZnSnN2. Hard X-ray photo­emission spectra suggest different degrees of cation disorder from comparison with hybrid DFT-calculated densities of states.

Item Type: Article
Uncontrolled Keywords: band gap, energy materials, semiconductors, thin films, ZnSnN2
Subjects: ?? QC ??
Depositing User: Symplectic Admin
Date Deposited: 01 Dec 2015 10:44
Last Modified: 17 Oct 2021 05:10
DOI: 10.1002/aenm.201501462
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