InAs Diodes Fabricated Using Be Ion Implantation

White, Benjamin S, Sandall, Ian C ORCID: 0000-0003-3532-0373, David, John PR and Tan, Chee Hing (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (9). pp. 2928-2932.

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Official URL: http://dx.doi.org/10.1109/ted.2015.2456434

Abstract

Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.

Item Type:	Article
Uncontrolled Keywords:	Annealing, indium arsenide, ion implantation, photodiode
Depositing User:	Symplectic Admin
Date Deposited:	12 Apr 2016 11:21
Last Modified:	16 Dec 2022 16:53
DOI:	10.1109/TED.2015.2456434
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000434