H-tailored surface conductivity in narrow band gap In(AsN)



Velichko, AV, Patane, A, Capizzi, M, Sandall, IC ORCID: 0000-0003-3532-0373, Giubertoni, D, Makarovsky, O, Polimeni, A, Krier, A, Zhuang, Q and Tan, CH
(2015) H-tailored surface conductivity in narrow band gap In(AsN). APPLIED PHYSICS LETTERS, 106 (2). 022111-.

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Abstract

<jats:p>We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼1018 m−2 and a high electron mobility (μ &amp;gt; 0.1 m2V−1s−1 at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.</jats:p>

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 27 Apr 2016 15:30
Last Modified: 15 Mar 2024 03:06
DOI: 10.1063/1.4906111
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3000886