Linear array of InAs APDs operating at 2 μm


Sandall, Ian C, Zhang, Shiyong and Tan, Chee Hing (2013) Linear array of InAs APDs operating at 2 μm. OPTICS EXPRESS, 21 (22). pp. 25780-25787.

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Abstract

A linear array of avalanche photodiodes (APDs) comprising of 128 pixels was fabricated from InAs. The uniformity of the dark currents and avalanche gain was investigated at 77, 200 K and room temperature. The array shows highly uniform results apart from some defective pixels at the edge of the arrays. At 200 K and at a wavelength of 2.04 µm, we obtained an unmultiplied responsivity of 0.61 A/W at 0 V, along with a gain of 8.5 at a bias of 10 V.

Item Type: Article
Uncontrolled Keywords: 40 Engineering, 4008 Electrical Engineering
Depositing User: Symplectic Admin
Date Deposited: 27 Apr 2016 15:25
Last Modified: 12 Aug 2024 13:39
DOI: 10.1364/OE.21.025780
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3000889
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