Planar InAs photodiodes fabricated using He ion implantation

Sandall, Ian ORCID: 0000-0003-3532-0373, Tan, Chee Hing, Smith, Andrew and Gwilliam, Russell (2012) Planar InAs photodiodes fabricated using He ion implantation OPTICS EXPRESS, 20 (8). pp. 8575-8583. ISSN 1094-4087, 1094-4087

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Abstract

We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1 × 10¹⁸ cm^-3, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1 × 10⁵ ω/Square in an 'asimplanted' sample and with subsequent annealing this can be further increased to 1 × 10⁷ ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes. © 2012 Optical Society of America.

Item Type:	Article
Uncontrolled Keywords:	5108 Quantum Physics, 40 Engineering, 51 Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	27 Apr 2016 15:14
Last Modified:	16 Jun 2026 10:20
DOI:	10.1364/OE.20.008575
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000895
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