Sandall, Ian C ORCID: 0000-0003-3532-0373, Xie, Shiyu, Xie, JingJing and Tan, Chee Hing
(2011)
High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes.
OPTICS LETTERS, 36 (21).
pp. 4287-4289.
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AlAsSb paper formatted for optic letters_submitted_reviewed_resubmitted.doc - Unspecified Download (529kB) |
Abstract
The evolution of the dark currents and breakdown at elevated temperatures of up to 450 K are studied using thin AlAsSb avalanche regions. While the dark currents increase rapidly as the temperature is increased, the avalanche gain is shown to only have a weak temperature dependence. Temperature coefficients of breakdown voltage of 0.93 and 1.93 mV/K were obtained from the diodes of 80 and 230 nm avalanche regions (i-regions), respectively. These values are significantly lower than for other available avalanche materials at these temperatures. The wavelength dependence of multiplication characteristics of AlAsSb p-i-n diodes has also been investigated, and it was found that the ionization coefficients for electrons and holes are comparable within the electric field and wavelength ranges measured.
Item Type: | Article |
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Depositing User: | Symplectic Admin |
Date Deposited: | 27 Apr 2016 15:12 |
Last Modified: | 19 Jan 2023 07:37 |
DOI: | 10.1364/OL.36.004287 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3000896 |