High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes

Sandall, Ian C ORCID: 0000-0003-3532-0373, Xie, Shiyu, Xie, JingJing and Tan, Chee Hing (2011) High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes. OPTICS LETTERS, 36 (21). pp. 4287-4289.

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Abstract

The evolution of the dark currents and breakdown at elevated temperatures of up to 450  K are studied using thin AlAsSb avalanche regions. While the dark currents increase rapidly as the temperature is increased, the avalanche gain is shown to only have a weak temperature dependence. Temperature coefficients of breakdown voltage of 0.93 and 1.93  mV/K were obtained from the diodes of 80 and 230  nm avalanche regions (i-regions), respectively. These values are significantly lower than for other available avalanche materials at these temperatures. The wavelength dependence of multiplication characteristics of AlAsSb p-i-n diodes has also been investigated, and it was found that the ionization coefficients for electrons and holes are comparable within the electric field and wavelength ranges measured.

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	27 Apr 2016 15:12
Last Modified:	19 Jan 2023 07:37
DOI:	10.1364/OL.36.004287
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000896