Terahertz optical sideband emission in self-assembled quantum dots

Sandall, IC ORCID: 0000-0003-3532-0373, Porter, NE, Wagner, M, Schneider, H, Winnerl, S, Helm, M and Wilson, L (2010) Terahertz optical sideband emission in self-assembled quantum dots Applied Physics Letters, 96 (20). 201105-. ISSN 0003-6951, 1077-3118

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Abstract

A multilayer quantum dot sample has been excited with a strong terahertz (THz) electric field and probed with a near-infrared (NIR) laser. First-and second-order THz optical sidebands are generated on the NIR probe beam by driving quantum dot intersublevel resonances with the THz fields. A conversion efficiency of 3× 10-6 was obtained for the conversion of NIR power into sideband emission at 4 K, decreasing by a factor of 20 up to room temperature. The sideband emission wavelength can be tuned over ∼20 nm by selection of appropriate NIR and THz frequencies, due to the inhomogeneous broadening of the dot ensemble. © 2010 American Institute of Physics.

Item Type:	Article
Uncontrolled Keywords:	51 Physical Sciences, 5108 Quantum Physics, 40 Engineering, 4018 Nanotechnology
Depositing User:	Symplectic Admin
Date Deposited:	27 Apr 2016 15:10
Last Modified:	01 Mar 2026 11:47
DOI:	10.1063/1.3429681
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000897
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